This assignment focuses on Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs. So, analyze the paper in detail, reference the text, especially where you see equations

Physical Modeling of Bias Temperature-Instabilities in SiC MOSFETs

Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs.  Introduction 3-5 paragraphs. Work through the paper: Title Authors Affiliation Turn their introduction/conclusion into common English. What are the important points.  Why do you think this paper was included in IEDM? 6-10 paragraphs. Analyze the paper in detail, reference the text, especially where you see equations. The algorithms mentioned above, despite their undeniable power, share several shortcomings. The issue of actual sound quality is difficult to address directly, as it is inherently subjective–it is true, however, that in most cases, abstract sound synthesis output is synthetic-sounding.

Physical Modeling of Bias Temperature-Instabilities in SiC MOSFETs

This can, of course, be desirableWork through the equations with the paper’s data, compare to typical data from the text or from texts such as Sedra and Smith. Explore the paper’s bibliography, look to understand it. Also, Search previous IEDM and other IEEE articles for similar topics. Compare. Explain the results. Also, Does it make sense? Is it plausible? Be critical. Is there an important breakthrough here? Copy their graphs and figures and show them to us (cite them!). Copy figures from the text or elsewhere if it’s important. Your analysis is critical.Besides, this isn’t a summary or “book report” of the paper. You should not quote other papers to explain this paper. Conclusion Summarize the paper, and what did you learn?

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